sot-23 plastic-encapsulate transistors KTA1505 transistor pnp features excellent h fe linearity: complementary to ktc3876 maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c = -100 a,i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a,i c =0 -5 v collector cut-off current i cbo v cb = -35 v,i e =0 -0.1 a emitter cut-off current i ebo v eb = -5 v,i c =0 -0.1 a h fe(1) v ce = -1 v,i c = -100 ma 70 400 dc current gain h fe(2) v ce = -6 v,i c = -400 ma 25 collector-emitter saturation voltage v ce(sat) i c = -100 ma,i b = -10 ma -0.25 v base-emitter voltage v be v ce = -1 v,i c = -100 ma -1 v transition frequency f t v ce = -6 v,i c = -20 ma 200 mhz collector output capacitance c ob v cb = -6 v,i e =0,f= 1 mhz 13 pf classification of h fe(1) rank o y gr range 70-140 120-240 200-400 marking azo azy azg so t -23 1. base 2. emitter 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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